Quote

“[As a DJ] I always wanted to know, how does the sound gets generated…what is the scientific process that takes place to convert an electrical signal into an audio signal…I always knew, at the fundamental level, that energy is neither created nor destroyed, the first laws of physics.”

KEVIN T. KORNEGAY - Professor of Electrical and Computer Engineering, Morgan State University (in interview by The HistoryMakers)

Bio

Kevin T. Kornegay is Professor of Electrical and Computer Engineering at Morgan State University. At the time of his MIT appointment, he was Assistant Professor at Purdue University. His research interests include: big bandgap semiconductor devices, smart power electronics and Power Electronic Building Blocks (PEBBs), wireless MEMS and integrated electronic for harsh environments, and VLSI design and CAD for VLSI; radio frequency and millimeter wave integrated circuit design, high-speed circuits, broadband wired and wireless communication systems, and cyber-physical systems. 

Dr. Kornegay earned a BEE with honors (1985) from Pratt Institute. He holds both the MS (1990) and the PhD (1992) in Electrical Engineering and Computer Science from the University of California at Berkeley. Before beginning his teaching career, he was employed at AT&T Bell Laboratories and at the IBM Thomas J. Watson Research Center. Dr. Kornegay served three years as an assistant professor in the School of Electrical and Computer Engineering at Purdue University. 

In 1997, he joined the faculty at Cornell University, where he became Associate Professor in the Electrical and Computer Engineering Department and the Director of the Cornell Broadband Communications Research Laboratory. His research on MEMS and integrated systems for harsh environments, wireless sensor systems, VLSI design, smart power electronics, and wide bandgap semiconductors attracted funding from the Air Force Office of Scientific Research (AFOSR), the Office of Naval Research (ONR), the National Science Foundation (NSF), and the Alcoa Foundation. In 2005, Dr. Kornegay joined Georgia Institute of Technology as Motorola Professor in the School of ECE. He would remain there for five years before joining the faculty of Morgan State University.

Dr. Kornegay was selected as a participant in the National Academy of Engineering Frontiers of Engineering Symposium, and the German–American Frontiers of Engineering, where he later served on the organizing committee. Service on many other committees include: International Test Conference and the IEEE Computer Society Annual Workshop on VLSI; Editorial Board of the IEEE Design and Test of Computers Magazine; International Symposium on Power Semiconductor Devices and ICs; and the IEEE Industrial Applications Society Meeting. He is also Senior Member of the IEEE, and a member of the National Society of Black Engineers (NSBE), Eta Kappa Nu, and Tau Beta Pi. 

Honors:  Menschel Award, Cornell University Provost’s Award for Distinguished Scholarship; IBM Faculty Partnership Award; National Semiconductor Faculty Development Award; General Motors Faculty Fellowship Award; Distinguished Lecturer of the IEEE Electron Devices Society; 2005 NSBE Dr. Janice A. Lumpkin Educator of the Year Award. 1999 National Science Foundation CAREER Award. U.S. Black Engineer and Information Technology Magazine named him the 2002 Black Engineer of the Year Award in Higher Education. In 2004, he was named by Science Spectrum Magazine as one of the 50 Most Important Blacks in Research Science.

As a 1999-2000 MLK Visiting Professor at MIT, Dr. Kornegay was hosted by Assistant Professor Anantha P. Chandrakasan in the Department of Electrical Engineering and Computer Science.

Portfolio

Patents

 

 

 

 

 

 

 

 

 

 

 

 

 

Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry(Link)

United States 7,615,788

Issued November 10, 2009

A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.

---

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low-voltage high-speed differential logic devices and method of use thereof(Link)

United States 7,098,697

Issued August 29, 2006

A circuit topology for high speed low voltage logic circuits is disclosed that reduces the number of levels of stacked active circuit elements from 3 to 2. Circuits providing a variety of logic functions are presented, including a latch, an exclusive OR gate, a combination XOR and latch, a multiplexer and a demultiplexer. Circuits built according to the principles of the invention have been operated at speeds of 40 GHz. The circuit topology can operate at supply voltages as low as 2V (for silicon or silicon-germanium based devices) and provide power saving of 25%–50% or more, depending on the logic function. In some embodiments, circuits comprising single ended or differential inputs can be provided.

Publications

Selected, 2005-2012

Title Year
A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer
J Kim, W Kim, H Jeon, YY Huang, Y Yoon, H Kim, CH Lee, KT KornegaySolid-State Circuits, IEEE Journal of 47 (3), 599-614
2012
A linear multi-mode CMOS power amplifier with discrete resizing and concurrent power combining structure
J Kim, Y Yoon, H Kim, KH An, W Kim, HW Kim, CH Lee, KT Kornegay
Solid-State Circuits, IEEE Journal of 46 (5), 1034-1048
2011
Systematic design of wideband ΔΣ modulators for WiFi/WiMAX receivers
P Malla, H Lakdawala, R Naiknaware, K Soumyanath, K Kornegay
Analog Integrated Circuits and Signal Processing 65 (2), 197-208
2010
A discrete resizing and concurrent power combining structure for linear CMOS power amplifier
J Kim, H Kim, Y Yoon, KH An, W Kim, CH Lee, KT Kornegay, J Laskar
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE, 387-390
2010
Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
K Kornegay, AR Atwell, M Balseanu, J Duster, E Hailu, C Li
US Patent 7,615,788
2009
W-band double-balanced down-conversion mixer with Marchand baluns in silicon-germanium technology
J Kim, KT Kornegay, J Alvarado, CH Lee, J Laskar
Electronics letters 45 (16), 841-843
2009
Design and optimization of a 71 Gb/s injection-locked CDR
TS Mukherjee, M Omer, J Kim, KT Kornegay
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on, 177-180
2009
A wide bandwidth SiGe broadband amplifier for 100 Gb/s Ethernet applications
TS Mukherjee, DC Cressler, KT JD Kornegay
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
2009
A 91 GHz receiver front-end in silicon-germanium technology
J Kim, J Alvarado, KT Kornegay
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 237-240
2008
W-band SiGe LNA using unilateral gain peaking
J Alvarado, KT Kornegay, BP Welch, YW Wang
Microwave Symposium Digest, 2008 IEEE MTT-S International, 289-292
2008
A 28mW Spectrum-Sensing Reconfigurable 20MHz 72dB-SNR 70dB-SNDR DT ΔΣ ADC for 802.11 n/WiMAX Receivers
P Malla, H Lakdawala, K Kornegay, K Soumyanath
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical ...
2008
A novel circuit-level SEU hardening technique for high-speed SiGe HBT logic circuits
TS Mukherjee, AK Sutton, KT Kornegay, R Krithivasan, JD Cressler, G Niu, ...
IEEE Transactions on Nuclear Science 54 (6), 2086-2091
2007
A digitally-enhanced 2-0 ΔΣ ADC
P Malla, H Lakdawala, K Kornegay, K Soumyanath
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on, 940-943
2007
ΔΣ ADC Design Considerations for WiFi/WiMAX Receivers
P Malla, H Lakdawala, R Naiknaware, S Krishnamurthy, K Kornegay
Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on ...
2007
60-GHz LNA using a hybrid transmission line and conductive path to ground technique in silicon
J Alvarado, KT Kornegay, D Dawn, S Pinel, J Laskar
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE, 685-688
2007
Extended bandwidth amplifier and oscillator using positive current feedback through inductive load
D Kucharski, K Kornegay
US Patent 7,215,194
2007
2.5 V 43&# 8211; 45 Gb/s CDR Circuit and 55 Gb/s PRBS Generator in SiGe Using a Low-Voltage Logic Family
D Kucharski, KT Kornegay
Solid-State Circuits, IEEE Journal of 41 (9), 2154-2165